Design, Simulation, and Work Function Trade for DC and Analog/RF Performance Enhancement in Dual Material Hetero Dielectric Double Gate Tunnel FET

The influence of hetero dielectric gate oxide and work function engineering on DC and Analog/RF performance of dual material hetero dielectric double gate tunnel field-effect transistors (DMHDDGTFET) is investigated in this research. We examined an optimised hetero gate dielectric to reduce ambipolar current conduction, leakage current, and boost ON-current for this purpose (I-ON). In addition, the entire gate electrode of the proposed device structure DMHDDGTFET has consisted of three sections named as tunneling gate (M-1) with work function (phi(1)), control gate (M-2) with work function (phi(2)), and auxiliary gate (M-3) with work function (phi(3)). To preserve dual work functionality, all possible arrangements of these work functions were incorporated. The technology computer-aided design (TCAD) simulations were carried out for these probable arrangements and matched with single material hetero dielectric double gate tunnel field-effect transistor (HDDGTFET) and conventional double gate TFET (phi(1) = phi(2) = phi(3)). Simulation results show that the work function grouping (phi(1) = phi(3) < phi(2)) provides better device performance such as improved switching characteristics and sub-threshold slope (SS). Further, based on the utmost performed work function combination the analog/RF performance analysed. This work shows improved analog/RF parameters like transconductance (g(m)), the gate to source capacitance (C-gs), the gate to drain capacitance (C-gd), and cut-off frequency (f(T)). The influence of incorporating hetero dielectric and work function engineering shows a significant enhancement in ON-state current I-ON (1.93 x 10(-4) A/mu m) and lower leakage current I-OFF (2.49 x 10(-17) A/mu m), I-ON/I-OFF (7.76 x 10(12)), smaller subthreshold swing SS (6.8 mV/decade), higher transconductance (1.12 ms) and cut-off frequency (228.4 GHz) making this device suitable for low power and high-frequency applications.