Pro-environment Cu2O facilitate stable low-wastage ultraviolet p-CuxO/n-GaN LEDs with virtual electron blocking nanolayer

•1. The influence mechanisms of CuxO (x = 1, 2, 4/3) as a HIL on the performance of GaN based UV-LEDs have been discussed in detail and filled the blank of Cu2O application in the field of luminescence.•2. The natural electron blocking effect in p-Cu2O/n-GaN heterojunction has promoted the electrical and luminescence properties.•3. An ageing test on uncased LED chips were carried out during constant current and various operating temperatures.