Switch and interference behaviors at domain walls of magnetic topological insulators

Electric transport properties at domain walls of magnetic topological insulators were studied numerically using nonequilibrium Green’s function method. Two devices, domain wall bridge and Fabry–Perot interferometer, were proposed. For the domain wall bridge, it can be switched between a high-resistance state and a low-resistance state by a change in its configuration from a Bloch type to a Néel type. For the Fabry–Perot interferometer, the quantum interference of chiral edge modes was examined under a perpendicular magnetic field. It is found that the interference survives for a wide range of system parameters. These findings reveal the potential applications of the domain wall of magnetic topological insulators in low-power-dissipation spintronic devices.