Flexible memory device based on polymer ferroelectric with zinc oxide single-nanowire transistors for robust multilevel operation

We demonstrate a flexible ferroelectric polymer-based memory with a zinc oxide (ZnO) single-nanowire transistor; its enhanced memory properties are attributed to the limited size of the semiconducting single-nanowire, which suppresses leakage currents caused by parasitic capacitance. Memory devices based on hybrid ferroelectric field-effect transistors (Fe-FETs) exhibit an outstanding data retention time, with an on/off ratio of & SIM;10(7) for 10(4) s along with a highly stable endurance for 100 cycles, without drain current degradation at a readout voltage of 0.1 V. Furthermore, these enhanced characteristics lead to a robust performance, overcoming the changes in the hysteresis window caused by flexoelectricity under bending stress; thus, the flexible-polymer Fe-FET with a ZnO single-nanowire channel shows a multilevel switching behavior with three different drain current states under bending conditions.