Path Towards a Vertical TFET Enabled by Atomic Precision Advanced Manufacturing

We propose a vertical TFET using atomic precision advanced manufacturing (APAM) to create an abrupt buried n ++ -doped source. We developed a gate stack that preserves the APAM source to accumulate holes above it, with a goal of band-to-band tunneling (BTBT) perpendicular to the gate - critical for the proposed device. A metal-insulator-semiconductor (MIS) capacitor shows hole accumulation above the APAM source, corroborated by simulation, demonstrating the TFET's feasibility.