High-aspect Nano-Groove Fabrication in Thick Film Resists Using 150-Kv High Acceleration Voltage Electron Beam Lithography
Precision engineering(2022)
Abstract
High acceleration voltage (150 kV) electron beam lithography is applied to two types of thick film resists with different contrasts (gamma). When using 1.6-mu m thick high-gamma resist, the lowest width discrepancy, 35 nm, was observed at 150 kV in the cross-sectional shape, which was almost vertical. At 50 kV, the discrepancy was more than four times greater than the width at 150 kV. The 50-kV cross-sections were drop shaped. The maximum line widths were similar for both resists, while the top line widths were smaller for the high-gamma resist than for the low- gamma resist. In addition, Monte Carlo simulation results were consistent with the experimental values, especially at 150 kV.
MoreTranslated text
Key words
Electron beam lithography,Nanofabrication,Acceleration voltage,Electron beam resist,Contrast gamma,Monte Carlo simulation
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined