Effect of intrinsic ZnO thickness on the performance of SnS/CdS-based thin-film solar cells

Tin monosulfide (SnS) has promising properties as an absorber material for thin-film solar cells (TFSCs). SnS/ CdS-based TFSCs have the following device structure: SLG/Mo/SnS/CdS/i-ZnO/AZO/Al. The optimization of thickness of intrinsic zinc oxide (i-ZnO) for SnS-absorber layers and its impact on SnS/CdS heterojunction TFSCs has been investigated at different thicknesses ranging from 39 nm to 73 nm. With the increase in thickness of iZnO from 39 nm to 45 nm, the overall performance improved. The highest PCE of 3.50% (with VOC of 0.334 V, JSC of 18.9 mA cm-2, and FF of 55.5%) was observed for 45 nm-thick i-ZnO layers. Upon a further increase in the i-ZnO thickness to 73 nm, the device performance deteriorated, indicating that the optimum thickness of the iZnO is 45 nm. The device performances were analyzed comprehensively for different i-ZnO thicknesses.