Symmetric "Double Spiro" Wide Energy Gap Hosts for Blue Phosphorescent OLED Devices

ADVANCED OPTICAL MATERIALS(2022)

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摘要
Wide energy gap materials dispiro[fluorene-9,9 '-anthracene-10 ',9 ''-fluorene] (SAS) and dispiro[xanthene-9,9 '-anthracene-10 ',9 ''-xanthene] (XAX) containing double spiro-carbons, are introduced as hosts for blue phosphorescent organic light-emitting diodes (PHOLEDs). Both SAS and XAX are free of heteroatomic exocyclic bonds, which are implicated in limiting the stability of blue PHOLEDs. The materials are synthesized in gram-scale quantities through short and efficient paths. They have large energy gaps (>= 5.0 eV) between the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) and correspondingly have high triplet energies in solid state (E-T approximate to 3.0 eV). Analysis of devices using SAS and XAX as host materials with the blue phosphorescent dopant fac-tris(N,N-di-p-tolyl-pyrizinoimidazol-2-yl)iridium(III) (Ir(tpz)(3)), shows that charges are transported and trapped by the dopant, which subsequently forms excitons directly on the phosphor. As a result, luminescence quenching pathways are suppressed which leads to blue phosphorescent devices with high (approximate to 18%) external quantum efficiency. Thus, SAS and XAX serve as promising host materials, with high triplet energies suitable for blue PHOLEDs.
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关键词
blue phosphorescent organic light-emitting diodes, high triplet energy, host materials, spiro-containing materials, wide energy gap
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