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Modeling of high speed uni-traveling carrier photodiodes

Y. G. Xiao,Z. Q. Li,Z. M. Simon Li

OPTOELECTRONIC DEVICES AND INTEGRATION X（2021）

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Abstract
Two-dimensional modeling of the InP/InGaAsP modified uni-traveling carrier photodiodes is reported. Basic device characteristics like dark I-V curve, device capacitance effect, frequency response and bandwidth etc., are presented. The simulation shows high bandwidth comparable with the experimental report. The results are further discussed with respect to the cliff layer dopant density.
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Key words
UTC photodiodes,photodetectors,device modeling,optic fiber telecommunication,photonic link
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