Multiple Modes Response of Co-Aperture 2D/1D Phototransistors

Strict requirements for target detection and identification of the complex background have increased because a single detection method is susceptible to environmental factors. The abilities to use terahertz imaging systems with high photoresponsivity and polarization sensitivity are of central importance to practical photodetectors. The present technology for high-sensitivity, polarization THz detectors integrated into a compact, common aperture (co-aperture) system remains largely unexplored challenges. By exploiting the inherent features of graphene/Bi2Te3 Dirac material and InAs nanowire, the plasma-wave and thermoelectric co-aperture phototransistors with a selective, synchronous, and controllable operating modes are devised in the same field of view, which provide remarkable efficiencies for THz-light harvesting on-chip. The achieved selective detection, better than that of single nanowire phototransistor, exhibits excellent sensitivity of 18.5 mA W-1 (12 V W-1) in graphene/Bi2Te3 channel and 3.5 mA W-1 (400 V W-1) in InAs nanowire channel, corresponding to the noise equivalent power of less than 0.1 nW/Hz(0.5). The results are exploited to highlight a novel strategy for the realization of efficient co-aperture phototransistors toward tunable, multiple modes, polarization THz detection by combining with in situ integration advantages of various materials, compatibility mechanisms, integration structures with metamaterials.