Investigation of parameters of new MAPD-3NM silicon photomultipliers

F. Ahmadov,G. Ahmadov,R. Akbarov,A. Aktag,E. Budak, E. Doganci, U. Gurer,M. Holik,A. Kahraman,H. Karacali, S. Lyubchyk, A. Lyubchyk, S. Lyubchyk, A. Mammadli, F. Mamedov,S. Nuruyev,P. Pridal,A. Sadigov,Z. Sadygov,O. Urban,E. Yilmaz, O. Yilmaz, J. Zich

JOURNAL OF INSTRUMENTATION（2022）

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摘要

In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.

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关键词

Gamma detectors, Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs, CMOS imagers, etc.), Spectrometers, Photon detectors for UV, visible and IR photons (gas) (gas-photocathodes, solid-photocathodes)

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