Modeling of InAs/Si Electron-Hole Bilayer Tunnel Field Effect Transistor

In this work, we present the results of modeling of InAs/Si Electron-Hole Bilayer Tunnel Field Effect Transistor. For this purpose, we used a developed numerical device simulator based on a self-consistent solution of Poisson and Schrodinger equations. We present the analysis of the impact of the channel layer thickness on the current-voltage characteristics. We show that using heterostructure in the device channel can give additional freedom in constructing the EHB TFET.