Development of a 0.15 m GaAs pHEMT Process Design Kit for Low-Noise Applications

Igor M. Dobush,Ivan S. Vasil'evskii,Dmitry D. Zykov,Dmitry S. Bragin,Andrei S. Salnikov,Artem A. Popov, Andrey A. Gorelov, Nikolay I. Kargin

ELECTRONICS（2021）

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摘要

This work presents a process design kit (PDK) for a 0.15 mu m GaAs pHEMT process for low-noise MMIC applications developed for AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa-resistors, capacitors, inductors, and transistors. The developed PDK can be used in technology transfer or education.

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关键词

process design kit,GaAs pHEMT,MMIC,model,simulation

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