Development of a 0.15 m GaAs pHEMT Process Design Kit for Low-Noise Applications
ELECTRONICS(2021)
Abstract
This work presents a process design kit (PDK) for a 0.15 mu m GaAs pHEMT process for low-noise MMIC applications developed for AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa-resistors, capacitors, inductors, and transistors. The developed PDK can be used in technology transfer or education.
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Key words
process design kit,GaAs pHEMT,MMIC,model,simulation
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