Steady-State and Transient Raman Gain Coefficients of Semiconductor Magneto-plasmas (Calculated for n-InSb-CO 2 Laser System)

Assuming that the origin of stimulated Raman scattering (SRS) lies in third-order effective (Raman) susceptibility arising due to nonlinear induced polarization, we obtained expressions for steady-state and transient Raman gain coefficients of weakly polar semiconductors magneto-plasmas under various geometrical configurations. The threshold pump intensity and optimum pulse duration for the onset of transient SRS have been estimated. For numerical calculations, we consider n-InSb crystal at 77 K temperature as a Raman active medium irradiated by a pulsed CO 2 laser. The dependence of Raman gain coefficients on doping concentration, external magnetostatic field and its inclination, scattering angle and pump pulse duration have been explored in detail with aim to determine suitable values of these controllable parameters to enhance Raman gain coefficients at lower threshold intensities, and to search the feasibility of efficient semiconductor nonlinear devices based on Raman nonlinearities. Most expectedly, the technological potentiality of weakly polar semiconductor magneto-plasmas as hosts for compression of scattered pulses and fabrication of efficient nonlinear devices such as frequency converters, Raman amplifiers and oscillators based on Raman nonlinearities have been established.