Transparent heterojunctions of Cu-based delafossites n-CuInO2/p-CuGaO2 by reactive evaporation method for transparent electronic applications

Fabrication of Transparent Conducting Cu-based p-n junction n-CuInO2/p- CuGaO2 by oxygen plasma assisted reactive evaporation method is reported herein for the first time. The p-n diode formed of p-CuGaO2 of transmittance -94% and conductivity -1.45 x 10-3 S/cm and n-CuInO2 of transmittance -66% and conductivity -2.05 x 10-3 S/cm manifests a rectification ratio -164 at 4 V with turn on voltage -3.61 V and an ideality factor -4.1 and a transmittance -76% at 618 nm wavelength. The optical bandgap of n-CuInO2 is -3.34eV whereas that of p-CuGaO2 is -3.61eV. The high rectification ratio along with good transmittance of the p-n junction gives it footing as a promising active device in transparent electronics.