Single-Crystalline Thin-Film Memory Arrays ofMolecular Ferroelectrics with UltralowOperation Voltages br

Though most of the recently developed molecular ferroelectrics(MFs) exhibit excellent ferroelectric properties, the practical applications are stillimpeded by the limited polarization axes, poor processing capability for a high-quality thinfilm, and the incompatibility with matured lithography techniques formicroelectronics. Here, we successfully demonstrated MF-based single-crystallinemicrodevice arrays using a lithography-compatible, solution-processed strategythat can avoid the above-mentioned obstacles at one time, i.e., dewetting-assistedpatterning crystallization strategy. As a protype, uniform and well-aligned single-crystalline thin-film arrays of multiaxial MF [3-oxoquinuclidinium]ClO4([3-O-Q]ClO4) are prepared. Owing to the well-aligned crystallographic orientation andpolarization direction, the obtained single-crystalline nonvolatile memory (NVM) arrays can exhibit an ultralow operatingvoltage of similar to 1.6 V and long endurance cycles of 106, which are superior to other organic NVM devices. This work implies apromising route to high-density single-crystalline memory arrays for data storage, especially for low-costflexible electronics.