Band offsets of metal oxide contacts on TlBr radiation detectors
JOURNAL OF APPLIED PHYSICS(2021)
摘要
Metal oxides are investigated as an alternative to metal contacts on thallium bromide (TlBr) radiation detectors. X-ray photoelectron spectroscopy studies of SnO2/TlBr and ITO/TlBr devices indicate that a type-II staggered heterojunction forms between TlBr and metal oxides upon contacting. By using the Kraut method of valence band offset (VBO) determination, the VBOs of SnO2/TlBr and ITO/TlBr heterojunctions are determined to be 1.05 & PLUSMN; 0.17 and 0.70 & PLUSMN; 0.17 eV, respectively. The corresponding conduction band offsets are then found to be 0.13 & PLUSMN; 0.17 and 0.45 & PLUSMN; 0.17 eV, respectively. The I-V response of symmetric In/SnO2/TlBr and In/ITO/TlBr planar devices is almost Ohmic with a leakage current of less than 2.5 nA at 100 V.
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关键词
metal oxide contacts,radiation
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