Thermal and plasma enhanced atomic layer deposition of ultrathin TiO2 on silicon from amide and alkoxide precursors: growth chemistry and photoelectrochemical performance

Due to its low cost and suitable band gap, silicon has been studied as a photoanode material for some time. However, as a result of poor stability during the oxygen evolution reaction (OER), Si still remains unsuitable for any extended use. Ultra-thin titanium dioxide (TiO2) films have been used as protective coatings and are shown to enhance Si photoanode lifetime with added solar to hydrogen performance improvements through distancing the oxidation reaction away from the Si photoanode surface and improved charge transport through the anode. This study details the nucleation, growth chemistry, and performance of TiO2 thin films prepared via thermal and plasma enhanced atomic layer deposition (ALD) using both titanium isopropoxide and tetrakis(dimethylamido)titanium as the precursor material. The effect of post ALD treatments of plasma and air annealing was also studied. Films were investigated using photoelectrochemical cell testing to evaluate photoelectrochemical performance, and in-vacuum cycle-by-cycle x-ray photoelectron spectroscopy was used as the primary characterisation technique to study nucleation mechanisms and film properties contributing to improvements in cell performance. TiO2 grown by plasma enhanced ALD results in cleaner films with reduced carbon incorporation. However, despite increased carbon incorporation, thermally grown films showed improved photocurrent as a result of oxygen vacancies in these films. Post deposition annealing in a H-2 ambient is shown to further improve photocurrent in all cases, while annealing in atmosphere leads to uniform film chemistry and enhanced photocurrent stability in all cases.