Terahertz Dielectric Waveguide based on Silicon-on-Insulator Technology

Seyed Ali Hosseini Farahabadi,Milad Entezami,Hadi Amarloo,Safieddin Safavi-Naeini

2021 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting (APS/URSI)（2021）

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摘要

In this paper, a low-loss dielectric waveguide is implemented in silicon-on-insulator (SOI) technology working at the terahertz range of frequencies. The waveguide characteristics are investigated to support fundamental mode using full-wave simulations. A properly designed rectangular grid is utilized to handle the waveguide with minimized effect on the insertion loss of guiding channel.

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关键词

insertion loss,terahertz dielectric waveguide,silicon-on-insulator technology,low-loss dielectric waveguide,SOI,waveguide characteristics,fundamental mode,full-wave simulations,properly designed rectangular grid

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