Internal Electric Field Profiling of 2D P-N Junctions of Semiconductor Devices by 4D STEM and Dual Lens Electron Holography

Abstract: The internal electric field of a 2D P-N junction of a semiconductor is mapped out by two techniques: measuring the deflection of the transmitted beam in micro-STEM mode with acquisition and data fitting of an un-scattered beam image, and through the derivative of electrostatic potential maps by dual lens electron holography. Comparable results of the P-N junction internal electric field measured with these two techniques are reported.