A universal approach to FET compact modeling: case study for MESFETs and OFETs

We demonstrate in this paper some applications of a general approach for constructing field-effect transistor compact models based on decomposing of FET modeling into two independent parts: device electrostatics and continuity equation. While the latter part has a universal form for any field-effect devices, the electrostatics is specific for different types of transistors which is expressed in different dependencies of the channel charge density upon gate voltage. We discuss here two applications of this approach using the examples of Schottky barrier MESFETs and organic field-effect transistors.