Long-term irradiation effects in p-MNOS transistor: experiment results

The dosimeters based on RADFETs are high actual for utilizing in space where the low dose rates irradiation prevails. The paper presents new experimental data on low-intensity irradiation of p-MNOS based RADFET. The obtained results were compared with the results of irradiation at high dose rates. The effect of ELDRS and the simultaneous annealing effect on different types of samples were discussed. The sensitivity of both types changed similarly at the range 1-100 rad(Si)/s. However, for dose rates less than 1 rad(Si)/s, the effect of the simultaneous annealing on change in the threshold voltage shift in time was clearly noticed only for samples with 500 nm oxide and absented for samples with 150 nm oxide.