Photonic integrated structures for room-temperature single-photon emitters in gallium nitride

Single photon emitters in GaN have aroused great interest as they operate at room temperature, and can emit both in the telecom and near-IR (typically around 700 nm) ranges. We study the growth conditions that enable their presence in GaN, and address the fabrication of different GaN photonic circuits at the corresponding operating wavelengths. In particular, we discuss the fabrication of bullseye nano-antennas, as well as of a more complex system that includes a waveguide cavity surrounded by two asymmetric Distributed Bragg Reflectors, which enable the coupling to an auxiliary waveguide terminated by a grating out-coupler.