β-Ga2O3 epitaxy and power devices from metal-organic chemical vapor deposition

β-Ga2O3 epitaxy from metal-organic chemical vapor deposition (MOCVD) has exhibited low background defects and high mobility which are promising for high-power devices. Vertical field-plate Schottky diodes have been fabricated using MOCVD β-Ga2O3 epitaxy that showed punch through breakdown with a specific on-resistance (Ron,sp) of 0.67 mΩ-cm2. This Ron,sp is among the lowest of comparable β-Ga2O3 drift layer thickness reports and can be contributed from the high-mobility MOCVD β-Ga2O3 epitaxy. We also demonstrated Pseudo vertical diodes fabricated on a thicker MOCVD β-Ga2O3 on Fe-doped substrate that showed higher voltage, better leakage current, and improved surface properties compared to the thinner films on Sn-doped substrate epitaxy.