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Growing of bulk -(Al x Ga1-x )2O3 crystals from the melt by Czochralski method and investigation of their structural and optical properties

Dmitrii Zakgeim,Dmitrii Bauman,Dmitrii Panov,Vladislav Spiridonov,Arina Kremleva,Andrei Smirnov,Maxim Odnoblyudov,Alexey Romanov,Vladislav Bougrov

Applied Physics Express（2022）

Cited 7|Views20
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Abstract
Bulk (Al x Ga1-x )(2)O-3 crystals with an Al fraction x in the range from 0.0 to 0.23 were successfully grown by the Czochralski method. An increase in the band gap from 4.7 to 5.1 eV with the rise of the Al content was demonstrated by analyzing optical transmission spectra. The crystal quality of the obtained samples was characterized by X-ray diffractometry. The appearance of the crystal's mosaic blockness was found for the Al fraction x above 0.05.
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Key words
gallium oxide,bulk crystals,Czochralski method,X-ray diffraction,optical characterization
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