Dislocation Evolvement in Metamorphic In 0.83 Ga 0.17 As/InP Photodetectors Through Ex-Situ Rapid Thermal Annealing

Songyang Wang,Yingjie Ma,Yage Liu,Hongzhen Wang,Shuangyan Deng,Yi Gu,Bowen Liu,Tao Li,Xiumei Shao,Xue Li,Haimei Gong

IEEE JOURNAL OF QUANTUM ELECTRONICS（2022）

引用 1|浏览3

暂无评分

摘要

Ex-situ rapid thermal treatments of 1–2.5 $\mu \text{m}$ extended wavelength In0.83Ga0.17As/In0.83Al0.17As photodetector epiwafers on InP substrate were investigated. Enhanced photoluminescence intensities, narrower and stronger x-ray diffraction peaks, and decreased dislocation def...

查看译文

关键词

Annealing,Lattices,Temperature measurement,X-ray scattering,Substrates,Strain,Indium phosphide

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要