High-temperature evolution of diamond-SiC composites
Processing and Application of Ceramics(2022)
摘要
Diamond-SiC composites are attractive for improving the catastrophic fracture
behaviour of SiC. However, fundamental knowledge is missing about the
structure of this system and the mechanism of diamond graphitization. We
used spark plasma sintering to study the diamond-Si-SiC system between 1600
and 2000?C in the function of nanocrystalline (ND) and microcrystalline
(MD) diamond addition as well as the quantity of Sibonding phase. Increasing
sintering temperature induces intense graphitization and formation of
nano-onions, few-layered graphene and well-ordered graphite in the prepared
composites at elevated temperature. High resolution transmission electron
microscopy study demonstrates the occurrence of the previously erroneously
identified 5H-SiC polytype in the samples prepared at 2000?C. Regardless of
Si and diamond contents, SiC formation is not confirmed even at high
temperature.
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关键词
SiC-diamond composites, nanosized and microsized diamond, SPS, 5H-SiC phase
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