Electronic Properties of Fully Strained La1–xSrxMnO3 Thin Films Grown by Molecular Beam Epitaxy (0.15 ≤ x ≤ 0.45)

The structural, electronic, and magnetic properties of Sr-hole-doped epitaxial La1-xSrxMnO3 (0.15 <= x <= 0.45) thin films deposited using the molecular beam epitaxy technique on 4 degrees vicinal STO (001) substrates are probed by the combination of X-ray diffraction and various synchrotron-based spectroscopy techniques. The structural characterizations evidence a significant shift in the LSMO (002) peak to the higher diffraction angles owing to the increase in Sr doping concentrations in thin films. The nature of the LSMO Mn mixed-valence state was estimated from X-ray photoemission spectroscopy together with the relative changes in the Mn L-2,L-3 edges observed in X-ray absorption spectroscopy (XAS), both strongly affected by doping. CTM4XAS simulations at the XAS Mn L-2,L-3 edges reveal the combination of epitaxial strain, and different MnO6 crystal field splitting give rise to a peak at similar to 641 eV. The observed changes in the occupancy of the e(g) and the t(2g) orbitals as well as their binding energy positions toward the Fermi level with hole doping are discussed. The room-temperature magnetic properties were probed at the end by circular dichroism.