Chemical vapor deposition growth of CdSSe nanowires for high-performance photodetector

In this paper, CdSSe nanowires with high crystal quality were growth through a chemical vapor deposition method, which used different temperature to control material evaporation rate. Scanning electron microscopy characterization found that these nanowires have a smooth surface structure. Fluorescence microscopy images showed that the nanowires were uniformly distributed in composition, and micro-PL showed that they have high crystalline quality. Photodetector constructed by single nanowire demonstrated a high responsivity of up to 2081A ∙ W, a fast rise time of 0.191s and a fall time of 0.192s at bias of 1V. These convincing results indicate that CdSSe nanowires will have a brilliant future in smart optoelectronics.