Superior Electrostatic Control in Uniform Monolayer MoS2 Scaled Transistors Via In-Situ Surface Smoothening

Yuanyuan Shi,Benjamin Groven,Quentin Smets,Surajit Sutar,Sreetama Banerjee,Henry Medina,Xiangyu Wu,Cedric Huyghebaert,Steven Brems,Dennis Lin,Pierre Morin,Matty Caymax,Inge Asselberghs,Iuliana Radu

2021 IEEE International Electron Devices Meeting (IEDM)（2021）

引用 9|浏览16

关键词

uniform monolayer,electrostatic control,short channel transistors,ultrascaled devices,surface smoothening method,uniform monolayer scaled transistors,FinFET,smooth monolayer deposited via MOCVD,channel defectivity impacts,Pelgrom slope,size 0.8 nm,MoS2

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