Electrical properties of selectively deposited Graphene‐Like Film on silicon oxide/silicon structures pre‐irradiated with low energy electrons

Graphene-like films (GLFs) are selectively deposited on the silicon oxide/silicon structures preirradiated with electrons at various electron energies and irradiation doses. These films demonstrate high conductivity and are used as a gate material for metal-oxide-semiconductor (MOS)-based devices. It is shown that high-quality capacitance–voltage characteristics of the GLF-gated MOS structures can be obtained if both an energy and a dose are carefully tuned. Using the GLF-gated MOS as a pseudo-field effect transistor structure, a notable current modulation in the selectively grown GLF is observed.