Ammonia-free epitaxy of single-crystal InN using a plasma-integrated gas-injection module

Hajime Sakakita,Naoto Kumagai,Tetsuji Shimizu,Jaeho Kim,Hisashi Yamada,Xue-lun Wang

Applied Materials Today（2022）

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摘要

•Plasma-integrated gas injection yielded the highest reported growth rate for MOCVD.•Grown InN films had the lowest reported dislocation density to date.•The films had the narrowest RT photoluminescence peak ever reported in MOCVD.•The new method is promising for mass-production of nitride-based semiconductors.

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关键词

Plasma,MOCVD,Nitride-compound semiconductor,Environmentally friendly processing,Low dislocation density,Near-infrared photonics

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