Voltage Controlled Magnetization Dynamics of Permalloy on PMN-PT (011) Single Crystal

Due to the rapid improvement of high-density storage as well as speedy computing devices for potential applications in artificial intelligence and data centers, power efficient control has become more imperative ¹ . Conventionally, magnetic properties in these devices are controlled through an external magnetic field which hinders the miniaturization and power efficiency. Recent advancements in spintronic devices has shown efficient control of magnetic properties through spin orbit interaction. Particularly, voltage controlled modification of magnetic anisotropy, magnetization dynamics through converse magneto-electric (ME) coupling is prominent route for designing of low-power driven devices ² , However, obtaining strong ME coupling between ultra-thin ferromagnetic (1–5 nm) and thick ferroelectric substrates (0.5 mm) requires optimum growth conditions, high crystalline orientation and defect-free interface, which requires extensive studies.