Three-Zone Junction Termination Extensions for Improved Performance of Vertical GaN PN Diodes

2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)(2022)

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摘要
The design of three-zone junction termination extensions (JTE) to improve the breakdown voltage of vertical GaN diodes is explored. Simulation results show that the three-zone JTE distributes the electric field more effectively and reduce the peak electric fields compared with one-zone structure, without requiring complex fabrication processing. The edge terminations of the diodes are formed by ni...
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关键词
Performance evaluation,Fabrication,Temperature dependence,Temperature,Simulation,Very large scale integration,Power electronics
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