Al 2 O 3 -HfO 2 mixed high-k dielectrics for MIM decoupling capacitors in the BEOL

Konstantinos Falidas,Konstantin Mertens,Raik Hoffmann,Malte Czernohorsky,Johannes Heitmann

2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)（2022）

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摘要

An experimental study of MIM decoupling capacitors placed in the BEOL of 300mm wafers using Al2O3 within HfO2 dielectric thin films is reported. By increasing aluminum concentration (7.9%-14.3%) within the dielectric insulator, a capacitance density of up to 27.6 fF/µm2 with linearity of 1610 ppm/(MV/cm)2 at 10kHz was achieved. J-E and dielect...

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关键词

Temperature measurement,Temperature,Current measurement,Capacitors,Very large scale integration,Dielectric measurement,Dielectrics

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