CeO 2 -Doped Hf 0.5 Zr 0.5 O 2 Ferroelectrics for High Endurance Embedded Memory Applications
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)（2022）
关键词
Temperature,Annealing,Capacitors,Semiconductor device reliability,Switches,Doping,Very large scale integration
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