Performance Analysis of Negative Capacitance Field Effect Transistor using Lithium Niobate

N.R Saritha,J. Charles Pravin

2022 First International Conference on Electrical, Electronics, Information and Communication Technologies (ICEEICT)（2022）

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摘要

Negative Capacitance Field-Effect Transistor (NCFET) is an emerging innovation that consolidates a ferroelectric layer inside the semiconductor door stack to combat the essential furthest reaches of sub-limit swing in semiconductors. NCFETs utilize a ferroelectric layer within the transistor's gate. A Lithium Niobate (LiNbO3) layer within the transistor's gate is employed for voltage am...

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关键词

Electric potential,Lithium niobate,Ferroelectric materials,Field effect transistors,Doping,Logic gates,Capacitance

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