High Accuracy Simulation of Silicon Oxynitride Film Grown by Plasma Enhanced Chemical Vapor Deposition

Silicon oxynitride (SiOxNy) is a common barrier material in thin-film encapsulation (TFE) organic light-emitting diode (OLED). Substrate defects, voids and film internal defects occur during SiOxNy deposition process and result in poor film conformity and barrier failure. In this work, a mathematical model is built to evaluate experimental deposition rat...