Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors

Taras Ravsher,Andrea Fantini,Adrian Vaisman Chasin,Shamin Houshmand Sharifi,Hubert Hody,Harold Dekkers,Thomas Witters,Jan Van Houdt,Valeri Afanas’ev,Sebastien Couet,Gouri Sankar Kar

2022 IEEE International Reliability Physics Symposium (IRPS)（2022）

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摘要

To enable high-density cross-point arrays of magnetic memory a suitable access device is necessary. A promising candidate for this role is a metal-semiconductor-metal (MSM) tunneling device. In this work, the operation of an ultrathin Pt\6nm a-IGZO\Pt stack as an MSM selector is discussed. The focus is given to understanding the breakdown mechanism at high current regime, which prevents it from re...

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关键词

Degradation,Electric breakdown,Schottky barriers,Tunneling,Magnetic memory,Delays,Reliability

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