Synapse and Tunable Leaky-Integrate Neuron Functions Enabled by Oxide Trapping Dynamics in a Single Logic Transistor

IEEE Electron Device Letters(2022)

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摘要
We show that a high-k gated n-MOSFET can embody both the memory plasticity of a synapse and leaky-integration of a neuron, by virtue of the rich temporal dynamics of charge capture/emission by gate-oxide defects. In addition, a tunable leaky-integrate function is demonstrated. The lower limit of energy per input spike is on the order of fJ, which provides room for low-power trigger circuit design ...
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关键词
Logic gates,Neurons,Transistors,Synapses,Regulation,Electron traps,Voltage control
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