InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Superlattice

Jingyi Wang,Zhiyang Xie,Liqi Zhu,Xinbo Zou,Xuyi Zhao,Wenfu Yu,Ruotao Liu,Antian Du,Qian Gong,Baile Chen

IEEE Electron Device Letters（2022）

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摘要

In this work, an In0.53Ga0.47As/GaAs0.5Sb0.5 type-II superlattice(T2SL) based broadband photodetector with an optical spectrum response ranging from 250 nm to 2400 nm is demonstrated. The photodetector shows a low dark current density of $3.48\times 10^{-4}$ A/cm2 under t...

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关键词

Photodetectors,Broadband communication,Indium gallium arsenide,Dark current,Temperature measurement,Optical superlattices,Optical device fabrication

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