Enhancing Reliability and 2 Mm-Axial Mechanical Bending Endurance by Gate Insulator Improvements in Flexible Polycrystalline Silicon TFTs
IEEE Transactions on Electron Devices(2022)
Key words
Bending,Stress,Silicon,Thin film transistors,Helium,Reliability,Logic gates,Flexible electronics,flexible low-temperature polycrystalline silicon thin film transistors (LTPS TFTs),mechanical bending stress,negative-bias temperature stress (NBTS)
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