Photodetection properties of β-Ga2O3/n-Si isotype heterojunction for solar-blind ultraviolet photodetector

In this study, β-Ga2O3/n-Si isotype heterojunction was fabricated to form a solar-blind ultraviolet photodetector by depositing β-Ga2O3 film on n-type Si substrate using metal-organic chemical vapor deposition. Photodetection properties of the photodetector were investigated systematically. The fabricated isotype heterojunction photodetector exhibited typical rectifying characteristics and excellent light on-off switching performance. Under 254 nm illumination, the photodetector showed the photo-to-dark current ratio of 591.38 at −20 V bias. Meanwhile, fast response speed with rise time (τr1,τr2) of (0.20 s, 1.81 s) and decay time (τd1,τd2) of (0.02 s, 5.12 s) at −20 V bias was obtained. The results indicate that the photodetector based on β-Ga2O3/n-Si isotype heterojunction has excellent sensitivity and selectivity to solar-blind ultraviolet light.