Enhanced Raman gain coefficients of semiconductor magneto-plasmas

Considering the origin of stimulated Raman scattering in Raman susceptibility, we obtain expressions for Raman gain coefficients (under steady-state and transient regimes) of semiconductors magneto-plasmas under various geometrical configurations. The threshold value of excitation intensity and most favourable value of pulse duration (above which transient Raman gain vanishes) are estimated. For numerical calculations, we consider n-InSb crystal at 77 K temperature as a Raman active medium exposed to a frequency doubled pulsed CO2 laser. The variation of Raman gain coefficients on doping concentration, magnetic field and its inclination, scattering angle and pump pulse duration have been explored in detail with aim to determine suitable values of these controllable parameters to enhance Raman gain coefficients at lower threshold intensities and to establish the suitability of semiconductor magneto-plasmas as hosts for compression of scattered pulses and fabrication of efficient Raman amplifiers and widely tunable Raman oscillators.