Design of an erbium-doped Al2O3 optical waveguide amplifier with on-chip integrated laser pumping source

Erbium-doped optical waveguide amplifier (EDWA) is an important building block for conventional and integrated optical communication and light signal processing systems. In recent years remarkable advancement has been achieved for EDWA to meet the demand for silicon photonic chips and integrated photonic circuits. However, in the currently demonstrated EDWAs all the laser pumping sources are external or off-chip, which not only limits the application field of EDWA, complicates the amplification scheme, but also does not fulfill the expectation of monolithic integration. In this work we propose a design of EDWA using high-gain Er-doped Al2O3 waveguide, low-loss silicon-on-insulator (SOI) waveguide, and on-chip integrated semiconductor laser pumping source. The 1550 nm signal light and 1480 nm pump light are transmitted and combined in SOI waveguide and coupled into the EDWA waveguide embedded in the adjacent layer. The 1480 nm pump light is coupled into the SOI waveguide from a bonded hybrid III–V semiconductor laser. The pump and signal waveguide building scheme, the coupling method and structure, and the integration process of laser pumping source are shown and simulated. The system performance was evaluated by using the device’s structure parameters and Er3+ rate equation model. More than 1 dB/cm net gain and up to 35 dB maximum net gain can be achieved at about 100 mW pump power. It indicates that such an on-chip integration design is feasible and fully on-chip integrated optical waveguide amplifier could be achieved.