Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)（2019）
Abstract
The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias-condition. Switching tests were performed before, during and after irradiation. The devices were characterized at temperatures ranging from −50°C to +75°C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments.
MoreTranslated text
Key words
Performance evaluation,Time-frequency analysis,Temperature distribution,Radiation effects,Switching frequency,Switches,X-rays
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined