Monolithic Waveguide-Integrated Group IV Multiple-Quantum-Well Photodetectors on 300 mm Si Substrates

We report a monolithic waveguide integrated Ge0.92Sn0.08/Ge multiple-quantum-well (MQW) photodetector (PD) on the 300-mm Si wafer for $2 \mu \text{m}$ wavelength detection and optoelectronic integrated circuits. We take advantage of the Ge layer serving as a buffer layer between the GeSn absorption layer...