High-Temperature Static and Dynamic Characteristics of 4.2-kV GaN Super-Heterojunction p-n Diodes

This article presents the static and dynamic characterization of 4.2-kV super-junction p-n diodes at high temperatures. Reduction of the forward current with increasing temperature is consistent with 2DEG mobility degradation caused by polar optical phonon scattering. Reverse leakage current was dominated by isolation leakage, with an activation energy of ~0.26 eV, close to the reported activation...