Electrical Characteristics of Si 0.8 Ge 0.2 p-MOSFET With TMA Pre-Doping and NH 3 Plasma IL Treatment

Meng-Chien Lee,Nien-Ju Chung,Hung-Ru Lin,Wei-Li Lee,Yun-Yan Chung,Shin-Yuan Wang,Guang-Li Luo,Chao-Hsin Chien

IEEE Transactions on Electron Devices（2022）

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摘要

We successfully fabricated p-MOSFETs on Si0.8Ge0.2 substrate using trimethylaluminum (TMA) pre-doping and NH3 plasma as interfacial layer (IL) treatment for HfO2-based gate stacks. X-ray photoelectron spectroscopy (XPS) findings indicated that SiGe interface with TMA pre-doping and NH3 plasma was free from Ge–O bonds and mainly composed of Si–...

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关键词

Plasmas,Silicon germanium,Germanium,Silicon,Substrates,MOSFET circuits,Logic gates

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